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Mitsubishi offers Ku band low - noise GaAs HEMT
Mitsubishi Electric Corp. has developed a full-mold package low noise Ku1 band GaAs high electron mobility transistor (HEMT), the MGF4935AM that is highly suitable for low-noise amplifiers in Direct Broadcast Satellite (DBS) reception systems and Very Small Aperture Terminal (VSAT) systems. Details... more...
ST embraces 65nm process for SPEAr customizable chip
STMicroelectronics introduces a new member of its SPEAr family of configurable SoC ICs. Details... more...
Memory IP zooms in on OTP apps
Sidense, a developer of LNVM IP cores, announced the Sidense Low Power (SLP) OTP memory macrocells for low-power and cost-sensitive applications that require highly secure information storage. Details... more...