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Fujitsu Laboratories reports that it has developed a technology to create high-power GaN (gallium-nitride) HEMTs (high-electron-mobility transistors) that can operate for more than 1 million hours at 200°C under a pinch-off condition with a drain voltage of 50V. A proprietary N-type GaN surface layer enables the high level of reliability by improving crystal quality and minimizing surface ... Details... more...

Using atomic-scale measurements, scientists at JILA (which originally stood for the Joint Institute for Laboratory Astrophysics but now encompasses a wider breadth of science)—a joint venture of NIST (National Institute of Standards and Technology) and the University of Colorado at Boulder—have revealed a previously unknown type of collective behavior among semiconduct... Details... more...

Gasoline prices have soared, greenhouse-gas emissions are environmental concerns, and particulate emissions continue to have a health impact. It’s clear that, even five years from now, the profile of our almost-exclusively gas-powered-automobile-based transportation system must change. Government regulations and public concern about foreign-oil dependency will demand it. Details... more...