Service manuals, schematics, documentation, applications, datasheets, electronics
 

High - k process for CMOS cancels gate leakage
High - k process for CMOS cancels gate leakage
A high-k dielectric process for CMOS transistors promises to turn the International Semiconductor Roadmap into a freeway by eliminating the gate-leakage problem at advanced nodes down to 10nm.
Details
2007-12-06 00:00:00
 
Back / to news list

Generate page: 0.003 sec © DDR'Service, 2007-2026