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16 Oct 2007 - Freescale RF technology breaks the 1 kW barrier with 50V RF power LDMOS
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16 Oct 2007 - Freescale RF technology breaks the 1 kW barrier with 50V RF power LDMOS |
MUNICH, Germany (Freescale Technology Forum) - Oct. 16, 2007 - Freescale Semiconductor has expanded its portfolio of 50V LDMOS RF power transistors with three devices that set new standards for efficiency, gain, and thermal resistance when compared to competing bipolar and MOSFET devices.<IMG ALT="" BORDER="0" NAME="DCSIMG" WIDTH="1" HEIGHT="1" SRC="http://fdc.freescale.com/dcs7ve8l6000000sh0u6z3lov_6l1i/njs.gif?dcsuri=/rssview/pr/ncsg/10-16-07_RF_TECHNOLOGY_BREAKS_1_KW_BARRIER_WITH_50V_RF_POWER_LDMOS.html&tid=rsspr">
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2007-10-16 19:27:51
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