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Hitachi, Renesas develop 1.5-V phase-change memory module
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Hitachi, Renesas develop 1.5-V phase-change memory module |
Fabricated using a 130-nm CMOS process, Hitachi Ltd. and Renesas Technology Corp. have developed a 512-Kbyte, 1.5-V low-power, high-speed phase-change memory module for on-chip nonvolatile memory applications that achieves 416-kbyte/sec high-speed write and read speeds with an access time of 20-ns.
Details
2007-02-22 00:52:00
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